Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
The semiconductor industry is transitioning to the 'More Moore'era, driven by the adoption of
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …
scale manipulation, challenging the conventional limitations of semiconductor materials …
Interfaces in two-dimensional transistors: Key to pushing performance and integration
Abstract Two-dimensional (2D) semiconductors have garnered significant interest due to
their atomically thin structure that greatly enhances' More Moore'dimensional scaling and …
their atomically thin structure that greatly enhances' More Moore'dimensional scaling and …
Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors
The ongoing reduction in transistor sizes drives advancements in information technology.
However, as transistors shrink to the nanometer scale, surface and edge states begin to …
However, as transistors shrink to the nanometer scale, surface and edge states begin to …
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …
integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited …
On-device phase engineering
In situ tailoring of two-dimensional materials' phases under external stimulus facilitates the
manipulation of their properties for electronic, quantum and energy applications. However …
manipulation of their properties for electronic, quantum and energy applications. However …
A stochastic encoder using point defects in two-dimensional materials
While defects are undesirable for the reliability of electronic devices, particularly in scaled
microelectronics, they have proven beneficial in numerous quantum and energy-harvesting …
microelectronics, they have proven beneficial in numerous quantum and energy-harvesting …
Unipolar p-type monolayer WSe2 field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts
M Li, X Zhang, Z Zhang, G Peng, Z Zhu, J Li, S Qin… - Nano Research, 2024 - Springer
High-performance field-effect transistors (FETs) based on atomically thin two-dimensional
(2D) semiconductors have demonstrated great promise in post-Moore integrated circuits …
(2D) semiconductors have demonstrated great promise in post-Moore integrated circuits …
Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures
Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile
integration of p-and n-type materials without a lattice mismatch. Here, we demonstrate gate …
integration of p-and n-type materials without a lattice mismatch. Here, we demonstrate gate …
High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes
B Liu, X Yue, C Sheng, J Chen, C Tang… - … Applied Materials & …, 2024 - ACS Publications
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant
attention due to their potential for next-generation electronics, which require device scaling …
attention due to their potential for next-generation electronics, which require device scaling …