Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently
gaining momentum in semiconductor processing, because of the increasing need for …

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with
atomic level control of the thickness and an excellent conformality on 3-dimensional …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining
growing interest. The selective ALD has unlocked attractive avenues for the development of …

Titanium (Ti) and its alloys have been extensively used as implant materials in orthopedic
applications. Nevertheless, implants may fail due to a lack of osseointegration and/or …

In the past decades, Moore's law drives the semiconductor industry to continuously shrink
the critical size of transistors down to 7 nm. As transistors further downscaling to smaller …

New approaches for area-selective deposition (ASD) are becoming critical for advanced
semiconductor patterning. Atomic layer deposition (ALD) and atomic layer etching (ALE) …

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated
silicon (100) surface in the absence of a photoresist. EUV lithography is the leading …

Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer
patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor …