Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an
extensive amount of interest amongst scientists and engineers alike and an intensive …

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …

Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for
integrated flexible electronics due to its excellent mechanical, optical and electronic …

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has
excellent physical properties, such as high carrier mobility, stability, and abundance on …

Complementary field-effect transistors—which have n-type and p-type field-effect transistors
(FETs) vertically stacked on top of each other—can boost area efficiency in integrated …

Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great
potential in next-generation scaled-up electronics, but the production of high-quality …

Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …

Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …