The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys
is reviewed including exciting recent results. Attention is paid to the crystal growth …

For more than three decades, SiC has been investigated as a wide band gap
semiconductor. This paper reviews ohmic and rectifying metal contacts on n-and p-type α …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

The use of diamond for electronic applications is not a new idea. As early as the 1920's
diamonds were considered for their use as photoconductive detectors. However limitations …

Recent developments in III-V nitride thin-film materials for electronic and optoelectronic
applications are reviewed. The problems that are limiting the development of these materials …

The invention is a method of growing intrinsic, substan tially undoped single crystal gallium
nitride with a donor concentration of 7x1017 cm-3 or less. The method comprises …

Zinc blende and wurtzitic GaN films have been epitaxially grown onto (001) Si by electron<
m1; &1p> cyclotron resonance microwave plasma‐assisted molecular beam epitaxy, using a …

Current issues and problems in the chemical vapor deposition (CVD) of diamond are those
which relate to its characterization, its nucleation on foreign surfaces, the question of its …

The potential of SiC and diamond for producing microwave and millimeter-wave electronic
devices is reviewed. It is shown that both of these materials possess characteristics that may …