Flexible semiconductor film‐based optoelectronic devices have garnered significant
attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart …

In this paper, Pd/ZnO samples with various palladium contents were prepared through a
facile one-pot hydrothermal method. The crystal structures, chemical compositions, and …

Continued development of GaN-based light emitting diodes is being hampered by
constraints imposed by current non-native substrates. ZnO is a promising alternative …

Abstract In this paper, Multiple Quantum Well (MQW) Light-Emitting Diodes (LEDs) with
compositionally step graded (CSG) Alternating Barriers (AB) of InGaN-AlGaN with p-doped …

XPS examinations of NdGaO3 single crystals were performed. A change of the chemical
composition was found in wafers cut from the beginning, middle and end part of a crystal …

A perpendicular InGaN/GaN multiple-quantum-wells structure on ZnO substrate for blue light
emitting diode (LED) was successfully fabricated by use of Metal-organic Chemical Vapor …

In this work, ZnO has been investigated as a substrate technology for GaN-based devices
due to its close lattice match, stacking order match, and similar thermal expansion …

InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor
deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with …

A new approach to fabricate GaN films has been proposed. The GaN films were grown by
both the metalorganic chemical vapor phase epitaxy (MOVPE) and the hydride vapor phase …

A multi-layer growth process is established for the growth of GaN on ZnO films and
implemented to the growth of GaN around ZnO nanopillars using metalorganic vapor phase …