Thin-film transistors (TFTs) have experienced tremendous development during the past
decades and show great promising applications in flat displays, sensors, radio frequency …

The advancement in Power Management Integrated Circuit (PMIC) has driven the dc-dc
conversion technology into a System-on-Chip (SoC) solutions, leveraging CMOS technology …

In this paper, detailed physical mechanisms of gate-induced drain leakage (GIDL) in gate-all-
around silicon nanowire transistors (SNWTs) are investigated and verified by experiments …

In this paper, we discuss logic circuit designs using the circuit model of three-state quantum
dot gate field effect transistors (QDGFETs). QDGFETs produce one intermediate state …

An extensive discussion on the High-κ Metal Gate (HKMG) Stack for Si-based MOSFETs has
been reviewed in this paper. The implementation of High-κ oxides is a develo** strategy …

In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …

Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel
devices and architectures. Since ternary logic architecture can perform the same function as …

BACKGROUND The present invention relates generally to semiconductor device
manufacturing and, more particularly, to a semicon ductor device having a localized …

In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of
ballisticity in subthreshold and higher ballisticity above threshold compare to conventional …

ABSTRACT A two-dimensional quantum mechanical model is presented for calculating
carrier transport in ultra-thin gate-all-around quantum wire transistor (GAAQWT) and carbon …