[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

F Giannazzo, I Deretzis, A La Magna, F Roccaforte… - Physical Review B …, 2012 - APS
Two-dimensional maps of the electronic conductance in epitaxial graphene grown on SiC
were obtained by calibrated conductive atomic force microscopy. The correlation between …

High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

F Giannazzo, G Greco, E Schilirò… - ACS Applied …, 2019 - ACS Publications
The electronic properties of the graphene (Gr) Schottky junction with an Al0. 22Ga0.
78N/GaN heterostructure on silicon have been investigated, both by experiment and with …

Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy

G Nicotra, QM Ramasse, I Deretzis, A La Magna… - Acs Nano, 2013 - ACS Publications
Atomic-resolution structural and spectroscopic characterization techniques (scanning
transmission electron microscopy and electron energy loss spectroscopy) are combined with …

Interface Structure and Do** of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations

SE Panasci, I Deretzis, E Schilirò… - physica status solidi …, 2023 - Wiley Online Library
The interface structure and electronic properties of monolayer (1L) MoS2 domains grown by
chemical vapor deposition on 4H–SiC (0001) are investigated by microscopic/spectroscopic …

Electronic and geometric structure of graphene/SiC (0001) decoupled by lithium intercalation

F Bisti, G Profeta, H Vita, M Donarelli, F Perrozzi… - Physical Review B, 2015 - APS
Graphene formation on top of SiC (0001) by decoupling the carbon buffer layer through
lithium intercalation is investigated. Low-energy electron diffraction and core-level …

Li-intercalated graphene on SiC (0001): An STM study

S Fiori, Y Murata, S Veronesi, A Rossi, C Coletti… - Physical Review B, 2017 - APS
We present a systematical study via scanning tunneling microscopy (STM) and low-energy
electron diffraction (LEED) on the effect of the exposure of lithium on graphene on silicon …

Buffer layer free graphene on SiC (0 0 0 1) via interface oxidation in water vapor

M Ostler, F Fromm, RJ Koch, P Wehrfritz, F Speck… - Carbon, 2014 - Elsevier
Intercalation of various elements has become a popular technique to decouple the buffer
layer of epitaxial graphene on SiC (0 0 0 1) from the substrate. Among many other elements …

Fabricating quasi-free-standing graphene on a SiC (0001) surface by steerable intercalation of iron

K Shen, H Sun, J Hu, J Hu, Z Liang, H Li… - The Journal of …, 2018 - ACS Publications
Graphene has been granted with appealing attributes for new-generation electronics due to
its unique electronic properties. However, the interaction between graphene and the …

Nano-scale corrugations in graphene: a density functional theory study of structure, electronic properties and hydrogenation

A Rossi, S Piccinin, V Pellegrini… - The Journal of …, 2015 - ACS Publications
Graphene rippled at the nanoscale level is gathering attention for advanced applications,
especially in the field of nanoelectronics and hydrogen storage. Convexity enhanced …