[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Physics of the switching kinetics in resistive memories
S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …
and electrochemical processes, are discussed with respect to their potential to overcome the …
Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM
The control and rational design of redox‐based memristive devices, which are highly
attractive candidates for next‐generation nonvolatile memory and logic applications, is …
attractive candidates for next‐generation nonvolatile memory and logic applications, is …
Nanoionic resistive switching memories: On the physical nature of the dynamic reset process
A Marchewka, B Roesgen, K Skaja… - Advanced Electronic …, 2016 - Wiley Online Library
Resistive switching memories based on the valence change mechanism have attracted
great attention due to their potential use in future nanoelectronics. The working principle …
great attention due to their potential use in future nanoelectronics. The working principle …
Couplings of polarization with interfacial deep trap and Schottky interface controlled ferroelectric memristive switching
Memristors with excellent scalability have the potential to revolutionize not only the field of
information storage but also neuromorphic computing. Conventional metal oxides are widely …
information storage but also neuromorphic computing. Conventional metal oxides are widely …
Design of oxygen vacancy configuration for memristive systems
Oxide-based valence-change memristors are promising nonvolatile memories for future
electronics that operate on valence-change reactions to modulate their electrical resistance …
electronics that operate on valence-change reactions to modulate their electrical resistance …
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
Interface‐type (IT) resistive switching (RS) memories are promising for next generation
memory and computing technologies owing to the filament‐free switching, high on/off ratio …
memory and computing technologies owing to the filament‐free switching, high on/off ratio …
Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices
Redox-type resistive random access memories based on transition-metal oxides are studied
as adjustable two-terminal devices for integrated network applications beyond von …
as adjustable two-terminal devices for integrated network applications beyond von …
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
C Baeumer, C Schmitz, A Marchewka… - Nature …, 2016 - nature.com
The continuing revolutionary success of mobile computing and smart devices calls for the
development of novel, cost-and energy-efficient memories. Resistive switching is attractive …
development of novel, cost-and energy-efficient memories. Resistive switching is attractive …