Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the
production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self …

Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …

Record-high electron mobilities were achieved for silicon-doped (010) β-Ga 2 O 3
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …

We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …

Abstract Gallium oxide (Ga $ _ {2} $ O $ _ {3} $) has gained increased attention for power
devices due to its superior material properties and the availability of economical device …

We report enhancement-mode-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial
channel grown by molecular beam epitaxy. A gate recess process is used to partially …

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial b-
Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The …