Epitaxial graphene on SiC: a review of growth and characterization

GR Yazdi, T Iakimov, R Yakimova - Crystals, 2016 - mdpi.com
This review is devoted to one of the most promising two-dimensional (2D) materials,
graphene. Graphene can be prepared by different methods and the one discussed here is …

[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Thermodynamics and kinetics of Pb intercalation under graphene on SiC (0001)

Y Han, M Kolmer, MC Tringides, JW Evans - Carbon, 2023 - Elsevier
SiC-supported graphene intercalated by a two-dimensional Pb monolayer can provide an
appealing platform for spintronic applications. Such a monolayer structure is …

Sn intercalation into the BL/SiC (0001) interface: A detailed SPA-LEED investigation

Z Mamiyev, C Tegenkamp - Surfaces and Interfaces, 2022 - Elsevier
Growth of epitaxial graphene (EG) with desired properties and formation of new 2D
interfaces can be achieved by intercalation of new elements into the carbon buffer layer …

Dy adsorption on and intercalation under graphene on 6H-SiC(0001) surface from first-principles calculations

Y Han, JW Evans, MC Tringides - Physical Review Materials, 2021 - APS
Previous experimental observations motivate clarification of configuration stabilities and
kinetic processes for intercalation of guest atoms into a layered van der Waals material such …

Buffer layer free graphene on SiC (0 0 0 1) via interface oxidation in water vapor

M Ostler, F Fromm, RJ Koch, P Wehrfritz, F Speck… - Carbon, 2014 - Elsevier
Intercalation of various elements has become a popular technique to decouple the buffer
layer of epitaxial graphene on SiC (0 0 0 1) from the substrate. Among many other elements …

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

C Melios, V Panchal, CE Giusca, W Strupiński… - Scientific reports, 2015 - nature.com
We investigate the local surface potential and Raman characteristics of as-grown and ex-situ
hydrogen intercalated quasi-free standing graphene on 4 H-SiC (0001) grown by chemical …

Charged Impurity Scattering and Electron–Electron Interactions in Large-Area Hydrogen Intercalated Bilayer Graphene

JC Kotsakidis, GM Stephen, M DeJarld… - … Applied Materials & …, 2024 - ACS Publications
Intercalation is a promising technique to modify the structural and electronic properties of 2D
materials on the wafer scale for future electronic device applications. Yet, few reports to date …

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

DM Pakdehi, K Pierz, S Wundrack, J Aprojanz… - arxiv preprint arxiv …, 2018 - arxiv.org
In this study, we first show that the argon flow during epitaxial graphene growth is an
important parameter to control the quality of the buffer and the graphene layer. Atomic force …

Energy barriers for Dy and H penetrating graphene on 6H-SiC (0001) and freestanding bilayer graphene from first-principles calculations

Y Han, JW Evans, MC Tringides - Applied Physics Letters, 2021 - pubs.aip.org
Currently, intercalation of foreign guest atoms into two-dimensional (2D) layered van der
Waals materials is an active research area motivated in part by the development of next …