The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

We have studied the electronic states of closely stacked InAs/GaAs quantum dots (QDs) with
a 4.0-nm spacer layer using linearly polarized photoluminescence (PL) and time-resolved …

Recent experimental measurements, without any theoretical guidance, showed that isotropic
polarization response can be achieved by increasing the number of quantum-dot (QD) …

A polarization-insensitive quantum dot semiconductor optical amplifiers (QD-SOAs) have
been studied for use in future optical communication systems. A part of our work shows that …

We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …

We present eight-band k⋅ p calculations of the electronic and polarization properties of
columnar In z Ga 1− z As quantum dots (CQD) with high aspect ratio embedded in an In x …

We studied polarization anisotropy observed in photoluminescence from closely stacked
InAs/GaAs quantum dots (QDs). As the number of stacked layers was increased, the …

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs)
with a thin spacer layer fabricated on an n+-GaAs (001) substrate were studied in the sub …

The influence of the nanostructure height on the polarization of the surface emission was
systematically investigated for In (Ga) As/InP quantum dashes. Polarization-resolved …

We report a systematic theoretical and experimental investigation of the polarization
properties of columnar quantum dots (CQDs) with extremely large aspect ratio and high …