Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions
When an electric current passes from one ferromagnetic layer via a non-magnetic layer into
another ferromagnetic layer, the spin polarization and subsequent rotation of this current can …
another ferromagnetic layer, the spin polarization and subsequent rotation of this current can …
Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can
induce steady-state magnetization precession, and has recently been proposed as a …
induce steady-state magnetization precession, and has recently been proposed as a …
Magnetoresistance effect in tunnel junctions with perpendicularly magnetized D022-Mn3-δGa electrode and MgO barrier
The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D0 22-Mn 3-
δ Ga (δ= 0.6) electrode was investigated in epitaxially grown D0 22-Mn 3-δ Ga (30)/Mg (d …
δ Ga (δ= 0.6) electrode was investigated in epitaxially grown D0 22-Mn 3-δ Ga (30)/Mg (d …
Post-oxidized Mg-Al-O (001) coherent tunneling barrier in a wide range of resistance-area products
We fabricated epitaxial Mg-Al-O (001) tunnel barriers using direct/indirect plasma oxidation
and natural oxidation of an MgAl layer for use in Fe/Mg-Al-O/Fe magnetic tunnel junctions …
and natural oxidation of an MgAl layer for use in Fe/Mg-Al-O/Fe magnetic tunnel junctions …
Densification and grain growth behaviour of high-purity MgO ceramics by hot-pressing
M Chen, J He, Y Zhang, Z Ding, J Luo - Ceramics International, 2017 - Elsevier
High-purity MgO ceramics with a relative density higher than 99.60% and a mean grain size
of 8.1 µm were prepared by hot-pressing at 1450° C and 35 MPa for 120 min. The MgO …
of 8.1 µm were prepared by hot-pressing at 1450° C and 35 MPa for 120 min. The MgO …
Observation of unusual magnetic behavior: spin reorientation transition in thick Co–Fe–Ta–B glassy films
Atomically smooth Co–Fe–Ta–B glassy films were deposited on variety of substrates (Si, Si
O 2, and keptone). An extensive magnetic characterization in the temperature range from 5 …
O 2, and keptone). An extensive magnetic characterization in the temperature range from 5 …
Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs
V Drewello, M Schäfers, O Schebaum, AA Khan… - Physical Review B …, 2009 - APS
MgO-based magnetic tunnel junctions with up to 230% tunnel magnetoresistance ratio at
room temperature and up to 345% at 13 K are prepared. The lower electrode is either …
room temperature and up to 345% at 13 K are prepared. The lower electrode is either …
Method of production of a magnetoresistance effect device
DD Djayaprawira, K Tsunekawa, M Nagai… - US Patent …, 2013 - Google Patents
(57) ABSTRACT A magnetoresistance effect device including a multilayer structure having a
pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least …
pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least …
Effect of dynamical electron correlations on the tunnelling magnetoresistance of Fe/MgO/Fe (001) junctions
We present a computational framework that combines dynamical mean-field theory (DMFT)
with density functional theory (DFT) and the nonequilibrium Green's function (NEGF) …
with density functional theory (DFT) and the nonequilibrium Green's function (NEGF) …