Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
Effect of drift layer do** and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …
systems, and their overarching design target is to minimize the conduction and switching …
Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
Breakdown up to 13.5 kV in NiO/β-Ga2O3 vertical heterojunction rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers with 100 μm diameter
fabricated on∼ 17–18 μm thick drift layers with carrier concentration 8.8× 10 15 cm− 3 and …
fabricated on∼ 17–18 μm thick drift layers with carrier concentration 8.8× 10 15 cm− 3 and …
Ultrathin-Body GaN-on-Sapphire HEMT with Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 1010 rad(Si)/s
This work demonstrates ultrathin-body GaN HEMTs on 6-inch sapphire substrate with robust
irradiation hardness against prompt dose rate (PDR) and single-event effect (SEE). By …
irradiation hardness against prompt dose rate (PDR) and single-event effect (SEE). By …
Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties
Z Qi, X Sun, Z Sun, Q Wang, D Zhang… - … Applied Materials & …, 2024 - ACS Publications
AlN/diamond heterostructures hold tremendous promise for the development of next-
generation high-power electronic devices due to their ultrawide band gaps and other …
generation high-power electronic devices due to their ultrawide band gaps and other …
Package Design and Analysis of a 20-kV Double-Sided Silicon Carbide Diode Module With Polymer Nanocomposite Field-Grading Coating
To tackle the insulation challenges present in packaging medium-voltage (MV) silicon
carbide (SiC) power devices, we developed a package design for a 20-kV SiC. This design …
carbide (SiC) power devices, we developed a package design for a 20-kV SiC. This design …
Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of
8 MV/cm and bulk mobility of up to 300 cm2V− 1s− 1, which is considered a promising …
8 MV/cm and bulk mobility of up to 300 cm2V− 1s− 1, which is considered a promising …