The second-generation of HiSIM_HV compact models for high-voltage MOSFETs
HJ Mattausch, M Miyake, T Iizuka… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
This paper reviews the industry-standard surface-potential-based compact model HiSIM_HV
for high-voltage MOSFETs, as, eg, the lateral double-diffused MOS transistor, and introduces …
for high-voltage MOSFETs, as, eg, the lateral double-diffused MOS transistor, and introduces …
BSIM6: Analog and RF compact model for bulk MOSFET
BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed
specially for accurate analog and RF circuit designs. The popular real-device effects have …
specially for accurate analog and RF circuit designs. The popular real-device effects have …
Technology and modeling of nonclassical transistor devices
This paper presents a comprehensive outlook for the current technology status and the
prospective upcoming advancements. VLSI scaling trends and technology advancements in …
prospective upcoming advancements. VLSI scaling trends and technology advancements in …
[BUCH][B] The physics and modeling of MOSFETS: surface-potential model HiSIM
M Miura-Mattausch - 2008 - books.google.com
This volume provides a timely description of the latest compact MOS transistor models for
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
[BUCH][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
Power-Loss Prediction of High-Voltage SiC-mosfet Circuits With Compact Model Including Carrier-Trap Influences
Y Tanimoto, A Saito, K Matsuura… - … on Power Electronics, 2015 - ieeexplore.ieee.org
The paper aims at clarifying the carrier-trap** influence on the electrical characteristics of
silicon carbide (SiC) power MOSFETs and its inclusion in the simulation of SiC power mosfet …
silicon carbide (SiC) power MOSFETs and its inclusion in the simulation of SiC power mosfet …
An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs
The constant-current (CC) method uses a current criterion to determine the threshold voltage
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …
Surface-potential-based silicon carbide power MOSFET model for circuit simulation
Transistor models have been playing a key role in designing efficient power converters. As
the operating frequency of the converters becomes higher, transistor models need to …
the operating frequency of the converters becomes higher, transistor models need to …
HiSIM-HV: A compact model for simulation of high-voltage MOSFET circuits
Y Oritsuki, M Yokomichi, T Kajiwara… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The completely surface-potential-based MOSFET model HiSIM-HV for high-voltage
applications of up to several hundred volts is reviewed, and recently developed new model …
applications of up to several hundred volts is reviewed, and recently developed new model …
Quasi-2-dimensional compact resistor model for the drift region in high-voltage LDMOS devices
A Tanaka, Y Oritsuki, H Kikuchihara… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
High-voltage (HV) metal-oxide-semiconductor field-effect transistors (MOSFETs) of the
laterally diffused metal-oxide-semiconductor (LDMOS) type enable applications over a wide …
laterally diffused metal-oxide-semiconductor (LDMOS) type enable applications over a wide …