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Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts
A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si| SiO x| AlO x| MoO
x| metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky …
x| metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky …
Enhancement of Interfacial Adhesion in Underfill/Silicon for Flip Chip Package by Plasma Treatment
Y Yang, B Wang, J Yang, H Lin, C Zhu… - 2022 23rd …, 2022 - ieeexplore.ieee.org
Plasma processing technology was introduced in flip chip to improve the interfacial
adhesion strength of silicon chip and underfill. The plasma treatment time was controlled to …
adhesion strength of silicon chip and underfill. The plasma treatment time was controlled to …