Synthesis and applications of III–V nanowires

E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

J Fang, Z Zhou, M **ao, Z Lou, Z Wei, G Shen - InfoMat, 2020 - Wiley Online Library
Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐
dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic …

Template-assisted scalable nanowire networks

M Friedl, K Cerveny, P Weigele, G Tütüncüoglu… - Nano …, 2018 - ACS Publications
Topological qubits based on Majorana Fermions have the potential to revolutionize the
emerging field of quantum computing by making information processing significantly more …

Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy

L Li, D Pan, Y Xue, X Wang, M Lin, D Su, Q Zhang… - Nano …, 2017 - ACS Publications
Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

JE Sestoft, T Kanne, AN Gejl, M von Soosten… - Physical Review …, 2018 - APS
The combination of strong spin-orbit coupling, large g factors, and the coupling to a
superconductor can be used to create a topologically protected state in a semiconductor …

Highly transparent gatable superconducting shadow junctions

SA Khan, C Lampadaris, A Cui, L Stampfer, Y Liu… - ACS …, 2020 - ACS Publications
Gate-tunable junctions are key elements in quantum devices based on hybrid
semiconductor–superconductor materials. They serve multiple purposes ranging from tunnel …

[HTML][HTML] Optical characterisation of nanowire lasers

SA Church, R Al-Abri, P Parkinson, D Saxena - Progress in Quantum …, 2022 - Elsevier
Semiconductor nanowire lasers are single-element structures that can act as both gain
material and cavity for optical lasing. They have typical dimensions on the order of an optical …

Antimony‐Rich GaAsxSb1−x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors

W Wang, SP Yip, Y Meng, W Wang… - Advanced Optical …, 2021 - Wiley Online Library
Due to their excellent properties, ternary GaAsxSb1− x nanowires have been extensively
investigated to enable various nanodevice structures. However, the surfactant effect of …

[HTML][HTML] Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

A Ajay, H Jeong, T Schreitmüller, M Döblinger… - Applied Physics …, 2022 - pubs.aip.org
We report the effects of antimony (Sb) surfactant on the growth and correlated structural and
optical properties of non-catalytic GaAs nanowires (NW) grown by selective area epitaxy on …