Compositional map** of semiconductor quantum dots and rings
In this article we review the extensive experimental work on the compositional map** of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques
III–V antimonide nanowires are among the most interesting semiconductors for transport
physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal …
physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal …
Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, cap**, and nanorings
TP Schulze, P Smereka - Physical Review B—Condensed Matter and …, 2012 - APS
A new kinetic Monte Carlo algorithm that efficiently accounts for elastic strain is presented
and applied to study various phenomena that take place during heteroepitaxial growth. For …
and applied to study various phenomena that take place during heteroepitaxial growth. For …
The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
The potential for GaSb nanostructures embedded in GaAs to operate as charge-based
memory elements at room temperature is introduced and explored. Cross-sectional …
memory elements at room temperature is introduced and explored. Cross-sectional …
Optical observation of single-carrier charging in type-II quantum ring ensembles
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-
confinement in the GaSb ring and electron confinement in its GaAs core. The latter is …
confinement in the GaSb ring and electron confinement in its GaAs core. The latter is …
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum
dots grown by molecular beam epitaxy. Various nanostructures are observed as a function …
dots grown by molecular beam epitaxy. Various nanostructures are observed as a function …
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam
epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and …
epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and …
The disintegration of GaSb/GaAs nanostructures upon cap**
AJ Martin, J Hwang, EA Marquis, E Smakman… - Applied Physics …, 2013 - pubs.aip.org
Atom probe tomography and cross-sectional scanning tunneling microscopy show that
GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon cap**. Band …
GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon cap**. Band …
Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal
the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and …
the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and …
An atomic scale study on the effect of Sb during cap** of MBE grown III–V semiconductor QDs
The use of Sb during the cap** process of quantum dots (QDs) to tune the emission
wavelength has been investigated by means of cross-sectional scanning tunneling …
wavelength has been investigated by means of cross-sectional scanning tunneling …