Sunlight-driven water splitting to produce hydrogen fuel has stimulated intensive scientific
interest, as this technology has the potential to revolutionize fossil fuel-based energy …

Aluminum (Al)-containing nitrides, including AlN, AlScN, and AlGaN, are emerging material
platforms for future-generation photonic, electronic, ferroelectric, and multifunctional …

Vertical light-emitting diodes (LEDs) have many advantages such as uniform current
injection, excellent scalability of the chip size, and simple packaging process. Hitherto …

Ultrawide bandgap III-nitrides, including AlN and high Al content AlGaN alloys, are of great
importance for applications to deep ultraviolet photonics and radio frequency electronics …

GaN is promising for fabricating high-quality substrate for growth of AlN and AlGaN film. To
study the microscopic adsorption and bonding mechanism of AlN and AlGaN film growth on …

Silicon (Si) has been an appealing substrate for vertical aluminum gallium nitride (AlGaN)
deep ultraviolet (UV) light-emitting diodes (LEDs), toward which, the first step is to …

Recent developments of wide bandgap devices using AlGaN thin films have opened
discussions about this ternary alloy's fabrication methods. The growth of GaN-based thin …

An experimental study of the structural characteristics of the surface and the parameters of
hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates …

Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride
(GaN) play a critical role in advancing high-power and high-frequency electronic …

Silicon (Si) has been an appealing substrate for vertical aluminum gallium nitride (AlGaN)
deep ultraviolet (UV) light-emitting diodes (LEDs), toward which, the first step is to …