Materials for high-temperature digital electronics
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …
technology, have changed nearly all aspects of human life from communication to …
Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch
Understanding the thermal stability and degradation mechanism of b-Ga2O3 metal-oxide-
semiconductor field-effect transistors (MOSFETs) is crucial for their high-power electronics …
semiconductor field-effect transistors (MOSFETs) is crucial for their high-power electronics …
Enhancing effective anisotropic thermal conductivity and electromagnetic interference shielding via interface engineering of natural cellular channels in wood and …
X Zhou, L Dong, S Zheng, D Cao, J Chen… - … Composites and Hybrid …, 2025 - Springer
In this study, a continuous heat transfer network was constructed through interface
engineering by performing surface functionalization on the surface of liquid metal (LM), on …
engineering by performing surface functionalization on the surface of liquid metal (LM), on …
MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region
YX Zeng, XR Wang, RY Yang, W Huang… - Journal of Vacuum …, 2024 - pubs.aip.org
The reliability issues in silicon carbide (SiC)-based devices with gate dielectric formed
through heat oxidation are significant factors limiting their application in power devices …
through heat oxidation are significant factors limiting their application in power devices …