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P-channel MOSFET as ionizing radiation detector
MM Pejović, SM Pejović - Applied Radiation and Isotopes, 2023 - Elsevier
In this study, the authors examine the responses of radiation-sensitive p-channel MOSFETs
to irradiation and subsequent annealing at room temperature and higher temperatures to …
to irradiation and subsequent annealing at room temperature and higher temperatures to …
The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy (Si)
GS Ristić, ND Vasović, M Kovačević… - Nuclear Instruments and …, 2011 - Elsevier
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from 60Co gamma-
ray source to dose of 230Gy (Si) without gate bias, and their reproducibility and sensitivity to …
ray source to dose of 230Gy (Si) without gate bias, and their reproducibility and sensitivity to …
Using RADFET for the real-time measurement of gamma radiation dose rate
MS Andjelković, GS Ristić… - Measurement Science and …, 2015 - iopscience.iop.org
Abstract RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing
radiation dosimeters operating on the principle of conversion of radiation-induced threshold …
radiation dosimeters operating on the principle of conversion of radiation-induced threshold …
A very-low-cost dosimeter based on the off-the-shelf CD4007 MOSFET array for in vivo radiotherapy applications
OF Siebel, JG Pereira, RS Souza… - Radiation …, 2015 - Elsevier
Purpose This paper presents a low-cost MOSFET dosimeter suitable for in vivo radiotherapy
applications. We analyze different methods to extract the threshold voltage and how this …
applications. We analyze different methods to extract the threshold voltage and how this …
Multilayer ZnO/Pb/G thin film based extended gate field effect transistor for low dose gamma irradiation detection
AMA Ali, NM Ahmed, NA Kabir… - Nuclear Instruments and …, 2021 - Elsevier
This study demonstrates the shifts in the threshold voltage ((Δ V TH) of a fabricated extended
gate field effect transistor (EGFET) induced by low-dose gamma irradiation as a detection …
gate field effect transistor (EGFET) induced by low-dose gamma irradiation as a detection …
General purpose MOSFETs for the dosimetry of electron beams used in intra-operative radiotherapy
The experimental response of different commercial metal-oxide-semiconductor transistors to
electron beams in order to check their capabilities as radiation sensors for intra-operative …
electron beams in order to check their capabilities as radiation sensors for intra-operative …
Response to ionizing radiation of different biased and stacked pMOS structures
Different low-cost commercial general-purpose MOSFETs and a RADFET are subjected to
ionizing photon beams for comparison. The main characteristics of the radiation response …
ionizing photon beams for comparison. The main characteristics of the radiation response …
Dose verification system based on MOS transistor for real-time measurement
This work presents a dosimetry system based on MOSFET sensors for real-time dose
monitoring. MOS transistors were biased during irradiation, and the response of lateral …
monitoring. MOS transistors were biased during irradiation, and the response of lateral …
The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses
The behavior of radiation-induced fixed traps (FTs) in gate oxide and radiation-induced
switching traps (STs) near and at the gate oxide/substrate interface during irradiation up to …
switching traps (STs) near and at the gate oxide/substrate interface during irradiation up to …
A new microcontroller-based RADFET dosimeter reader
ND Vasović, GS Ristić - Radiation Measurements, 2012 - Elsevier
A new reader for radiation dose measurements using RADFET (pMOSFET) dosemeters has
been developed. The threshold voltage (VT) of the pMOSFETs is measured using a “one …
been developed. The threshold voltage (VT) of the pMOSFETs is measured using a “one …