A system to monitor the radiation levels is required in the Large Hadron Collider (LHC) and
its injection lines in order to quantify the radiation effects on electronics. Thus, the RadMons …

RADNEXT is an EU-funded network of irradiation facilities and radiation effects' experts
aimed at increasing the quantity and quality of user access to accelerator infrastructure and …

Currently, faults suffered by SRAM memory systems have increased due to the aggressive
CMOS integration density. Thus, the probability of occurrence of single-cell upsets (SCUs) or …

The use of error-correction codes (ECCs) with advanced correction capability is a common
system-level strategy to harden the memory against multiple bit upsets (MBUs). Therefore …

We present the progress related to CERN's capacity of delivering highly penetrating, high-
linear energy transfer (LET) heavy ions for radiation effect testing of electronic components …

This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on
static random access memory (SRAM). We detailed irradiation test techniques and results …

For modern scaling devices, multiple cell upsets (MCUs) have become a major threat to high-
reliability field-programmable gate array (FPGA)-based systems. Thus, both performing the …

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM
components under ionizing radiation. Several types of failures are difficult to expose when …

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias
voltage of three generations of commercial off-the-shelf static random access memories …

Reliable computer systems employ error control codes (ECCs) to protect information from
errors. For example, memories are frequently protected using single error correction-double …