Integrated circuit devices and methods of manufacturing the same
M Cantoro, YC Heo, MT LUQUE - US Patent 10,020,396, 2018 - Google Patents
An integrated circuit device may include a substrate includ ing a main surface, a compound
semiconductor nanowire extending from the main surface in a first direction perpen dicular …
semiconductor nanowire extending from the main surface in a first direction perpen dicular …
Nanoscale wires, nanoscale wire FET devices, and nanotube-electronic hybrid devices for sensing and other applications
The present invention generally relates to nanotechnology, including field effect transistors
and other devices used as sensors (for example, for electrophysiological studies), nanotube …
and other devices used as sensors (for example, for electrophysiological studies), nanotube …
Semiconductor device including nanowire transistors with hybrid channels
(57) ABSTRACT A semiconductor device is provided that includes an n-type field effect
transistor including a plurality of vertically stacked silicon-containing nanowires located in …
transistor including a plurality of vertically stacked silicon-containing nanowires located in …
Nanoscale sensors for intracellular and other applications
The present invention generally relates to nanoscale wires for use in sensors and other
applications. In various embodiments, a probe comprising a nanotube (or other nanoscale …
applications. In various embodiments, a probe comprising a nanotube (or other nanoscale …
Group III-N nanowire transistors
HW Then, R Chau, B Chu-Kung, G Dewey… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A group III-N nanowire is disposed on a Substrate. A longitudinal length of
the nanowire is defined into a channel region of a first group III-N material, a source region …
the nanowire is defined into a channel region of a first group III-N material, a source region …
High-sensitivity nanoscale wire sensors
CM Lieber, X Gao, G Zheng - US Patent 9,535,063, 2017 - Google Patents
One aspect of the invention provides a nanoscale wire that has improved sensitivity, for
example, as the carrier concentration in the wire is controlled by an external gate voltage. In …
example, as the carrier concentration in the wire is controlled by an external gate voltage. In …
Nanoscale field-effect transistors for biomolecular sensors and other applications
CM Lieber, HS Choe, X Liu - US Patent 9,541,522, 2017 - Google Patents
7.301, 199 B2 11/2007 Lieber et al. 8,232.584 B2 7, 2012 Lieber et al. 8,575,663 B2
11/2013 Lieber et al. 9,102,521 B2 8, 2015 Lieber et al. 9,297,796 B2 3, 2016 Tian et al …
11/2013 Lieber et al. 9,102,521 B2 8, 2015 Lieber et al. 9,297,796 B2 3, 2016 Tian et al …
Nanosensors and related technologies
The present invention generally relates to nanotechnology and sub-microelectronic circuitry,
as well as associated methods and devices, for example, nanoscale wire devices and …
as well as associated methods and devices, for example, nanoscale wire devices and …
Semiconductor device including nanowire transistors with hybrid channels
(57) ABSTRACT A semiconductor device is provided that includes an n-type field effect
transistor including a plurality of vertically stacked silicon-containing nanowires located in …
transistor including a plurality of vertically stacked silicon-containing nanowires located in …
Tapered Connectors for Superconductor Circuits
A superconducting circuit includes a photon detector component, a second component, and
a multi-taper superconducting connector shaped to reduce current crowding, the …
a multi-taper superconducting connector shaped to reduce current crowding, the …