III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-
tunable GaAs1–x Sb x nanowires by molecular-beam epitaxy. GaAs1–x Sb x nanowires with …

Rational bottom-up assembly of nanowire networks may be a way to successfully continue
the miniaturization, which is the main driving force behind the semiconductor industry. So …

In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied
theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate …

We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission
spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical …

We demonstrate tunable bistability and a strong negative differential resistance in
InAs/GaSb core–shell nanowire devices embedding a radial broken-gap heterojunction …

The nanowire geometry offers significant advantages for exploiting the potential of III-Sb
materials. Strain due to lattice mismatch is efficiently accommodated, and carrier …

Over the past decade, III–V heterostructure nanowires have attracted a surge of attention for
their application in novel semiconductor devices such as tunneling field-effect transistors …

We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with
increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport …