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A review of gallium oxide-based power Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3) is a representative of ultra-wide bandgap semiconductors,
with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent …
with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent …
[HTML][HTML] New approaches and understandings in the growth of cubic silicon carbide
FL Via, M Zimbone, C Bongiorno, A La Magna… - Materials, 2021 - mdpi.com
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Ultralarge all‐inorganic perovskite bulk single crystal for high‐performance visible–infrared dual‐modal photodetectors
Visible‐infrared dual‐modal light harvesting is crucial for various optoelectronic devices,
particularly for solar cells and photodetectors. For the first time, this study reports on large 25 …
particularly for solar cells and photodetectors. For the first time, this study reports on large 25 …
[ספר][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Electron-phonon interaction and longitudinal-transverse phonon splitting in doped semiconductors
We study the effect of do** on the electron-phonon interaction and on the phonon
frequencies in doped semiconductors, taking into account the screening in the presence of …
frequencies in doped semiconductors, taking into account the screening in the presence of …
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
C Raynaud, D Tournier, H Morel, D Planson - Diamond and related …, 2010 - Elsevier
Temperature dependent properties of wide bandgap semiconductors have been used to
calculate theoretical specific on-resistance, breakdown voltage, and thermal run-away …
calculate theoretical specific on-resistance, breakdown voltage, and thermal run-away …
Review of wide band-gap semiconductors technology
H **, L Qin, L Zhang, X Zeng… - MATEC Web of …, 2016 - matec-conferences.org
Silicon carbide (SiC) and gallium nitride (GaN) are typical representative of the wide band-
gap semiconductor material, which is also known as third-generation semiconductor …
gap semiconductor material, which is also known as third-generation semiconductor …
Thermal shock performance of DBA/AMB substrates plated by Ni and Ni–P layers for high-temperature applications of power device modules
C Choe, C Chen, S Noh, K Suganuma - Materials, 2018 - mdpi.com
The thermal cycling life of direct bonded aluminum (DBA) and active metal brazing (AMB)
substrates with two types of plating—Ni electroplating and Ni–P electroless plating—was …
substrates with two types of plating—Ni electroplating and Ni–P electroless plating—was …
Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
Y Ando, K Nagamatsu, M Deki, N Taoka… - Applied Physics …, 2020 - pubs.aip.org
Ni/Al 2 O 3/GaN structures with vicinal GaN surfaces from the c-or m-plane were formed.
Then, electrical interface properties of the structures were systematically investigated. It was …
Then, electrical interface properties of the structures were systematically investigated. It was …
Effect of moisture on electrical properties and reliability of low dielectric constant materials
The effect of absorbed moisture on the electrical characteristics and reliability of low
dielectric constant materials (low-k) was investigated in this study. The experimental results …
dielectric constant materials (low-k) was investigated in this study. The experimental results …