Hot-electron nanoscopy using adiabatic compression of surface plasmons
Surface plasmon polaritons are a central concept in nanoplasmonics and have been
exploited to develop ultrasensitive chemical detection platforms, as well as imaging and …
exploited to develop ultrasensitive chemical detection platforms, as well as imaging and …
[LIBRO][B] Electronic properties of semiconductor interfaces
W Mönch - 2013 - books.google.com
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor,
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
The current–voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic
vapor-phase epitaxy on Ge substrates were determined in the temperature range 80–300 K …
vapor-phase epitaxy on Ge substrates were determined in the temperature range 80–300 K …
Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator–
semiconductor (MIS) GaAs Schottky diodes are investigated and compared with metal …
semiconductor (MIS) GaAs Schottky diodes are investigated and compared with metal …
Do** dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures
The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic
vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were …
vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were …
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
The electrical properties of Au/Ti/HfO 2/n-GaAs metal/insulating layer/semiconductor (MIS)
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs
Schottky diodes on n-Ge substrates are investigated and compared with characteristics of …
Schottky diodes on n-Ge substrates are investigated and compared with characteristics of …
Investigation of the size-scaling behavior of spatially nonuniform barrier height contacts to semiconductor surfaces using ordered nanometer-scale nickel arrays on …
RC Rossi, NS Lewis - The Journal of Physical Chemistry B, 2001 - ACS Publications
Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of
low barrier height nanometer-scale n-Si/Ni contacts interspersed among high barrier height …
low barrier height nanometer-scale n-Si/Ni contacts interspersed among high barrier height …
Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range
The current–voltage (I–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were
determined in the temperature range 80–400K. SBD parameters such as ideality factor n …
determined in the temperature range 80–400K. SBD parameters such as ideality factor n …