A review on performance comparison of advanced MOSFET structures below 45 nm technology node

N Mendiratta, SL Tripathi - Journal of Semiconductors, 2020 - iopscience.iop.org
CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …

Silicon nanowire GAA-MOSFET: A workhorse in nanotechnology for future semiconductor devices

K Bhol, B Jena, U Nanda - Silicon, 2022 - Springer
In today's world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of
scientific research interest in the field of semiconductor. It has been observed as one of the …

18nm n-channel and p-channel Do**less asymmetrical Junctionless DG-MOSFET: low power CMOS based digital and memory applications

N Mendiratta, SL Tripathi - Silicon, 2022 - Springer
In this paper, an 18nm do**less asymmetrical junctionless (AJ) double gate (DG)
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …

An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET

P Ghosh, S Haldar, RS Gupta, M Gupta - Microelectronics Journal, 2012 - Elsevier
In this paper, a drain current model incorporating drain-induced barrier lowering (DIBL) has
been developed for Dual Material gate Cylindrical/Surrounding gate MOSFET (DMG …

Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch

VM Srivastava, KS Yadav, G Singh - Microelectronics Journal, 2011 - Elsevier
In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …

[HTML][HTML] Impact of deep cryogenic temperatures on gate stack dual material DG MOSFET performance: Analog and RF analysis

SK Das, SM Biswal, LI Giri, U Nanda - e-Prime-Advances in Electrical …, 2024 - Elsevier
By understanding the potential benefits of Gate Stack Dual Material double gate MOSFET
(DG MOSFET), this research aims to contribute to the investigation of its electrical …

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

B Jena, KP Pradhan, S Dash, GP Mishra… - Advances in Natural …, 2015 - iopscience.iop.org
In this work the sensitivity of process parameters like channel length (L), channel thickness (t
Si), and gate work function (φ M) on various performance metrics of an undoped cylindrical …

Investigation on cylindrical gate all around (GAA) to nanowire MOSFET for circuit application

B Jena, KP Pradhan, PK Sahu, S Dash… - Facta Universitatis …, 2015 - casopisi.junis.ni.ac.rs
Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential
candidate to replace conventional MOSFET, as it introduces new direction for transistor …

Journey of Mosfet from planar to gate all around: A review

K Bhol, B Jena, U Nanda - Recent Patents on Nanotechnology, 2022 - benthamdirect.com
With the continuous miniaturization in device dimension to reach the expectation raised by
semiconductor users, the shape and size of the MOSFET are changing periodically. The …

Realization with fabrication of double-gate MOSFET based differential amplifier

JE Pakaree, VM Srivastava - Microelectronics Journal, 2019 - Elsevier
This research work designed a differential amplifier with Double-Gate (DG) MOSFET which
can be used in electronic devices at Micro-and Nano-technology level. The DG MOSFET …