The precise patterning of front-side mesas, backside vias, and selective removal of ternary
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …

Atomic layer etching (ALE) was performed on (Al, In, Ga) N thin films using a cyclic process
of alternating Cl 2 gas absorption and Ar+ ion bombardment in an inductively coupled …

In this study, we have performed a thorough characterization of the GaN surface after
etching up to 100 nm in Cl 2 plasma under various bias voltages and according to the carrier …

The ability to fabricate organized, dense arrays of GaN nanostructures with high aspect
ratios is of great interest for improving light extraction and absorption in optoelectronic …

Ultradeep (≥ 5 μm) electron cyclotron resonance plasma etching of GaN micropillars was
investigated. Parametric studies on the influence of the applied radio-frequency power …

This paper reports high two-dimensional electron gas mobility attained from the regrowth of
the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces …

The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN: Si
current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV …

The realization of vertical GaN devices requires deep plasma etching and is contingent on
high mask selectivity. In this work, we show that SiO2 can be an effective mask material for …

The choice of carrier wafer was found to significantly influence etch rates, selectivity, and
morphology in GaN micropillar etching in a Cl 2-Ar high-density inductively coupled plasma …

Conventional sidewall gratings in GaN-based distributed feedback (DFB) laser diodes (LD)
have a thick p-type layer, which may cause current spreading and carrier-induced anti …