Ballistic-electron emission microscopy (BEEM) is a relatively new technique, based on the
scanning-tunneling microscope, to study potential steps at interfaces with a lateral resolution …

Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for
nanometer-scale characterization of the spatial and electronic properties of semiconductor …

Scanning probe microscopy is a family of techniques which provide images of the surface
topography and, in some cases surface properties, on the atomic scale. Since its inception in …

We performed ballistic electron emission microscopy (BEEM) measurements on Pt and Pd/4
H-and 6 H− SiC Schottky contacts, obtained Schottky barrier heights, and observed …

Abstract Nanostructures of CaF 2 and CaF 1 on Si (111) are used to demonstrate a chemical
imaging method for insulators. Chemical sensitivity is achieved in scanning tunneling …

Semiconductor heterostructures, such as double-barrier resonant tunnelling diodes and
superlattices, are nowadays used for many applications. One very versatile and powerful …

Ballistic electron emission microscopy (BEEM) has been used to study metal-oxide-
semiconductor (MOS) structures such as A u/S i O 2/n-type Si (100) and I r/S i O 2/n-type Si …

A combination of ultraviolet and inverse photoemission is often used to determine the
position of the transport levels of semiconductors. Although data from direct methods like …

The structural and electronic properties of the epitaxial Al/Si (111) 7× 7 interface and their
modifications upon thermal annealing were investigated by scanning tunneling microscopy …

We report ballistic-electron emission microscopy (BEEM) investigation of Pd, Pt Schottky
contacts on 6H-, 4H-SiC, and Pd/15R-SiC. Measured Schottky barrier heights of 6H-and 4H …