With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …

TiO 2 has attracted significant attention as a prototypical material for memristors. In this
article, a Cu-doped TiO 2− x nanoscale memristor with a structure of Ti/TiO 2-x: Cu/Cu is …

Cation substitution technique in halide perovskites (HPs) is one of the famous schemes to
enhance the characteristics of HPs-based electronic and optoelectronic devices. Here, we …

Low-cost, stable, and easy-to-fabricate resistive switching memory (RSM) devices are highly
desirable for next-generation nonvolatile memories. Spinel-structured CuFe 2 O 4 (CFO) …

Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum
disulfide (MoS2) have attracted great attention due to their unique properties. To modulate …

Resistive random access memory or memristive devices has emerged as a new paradigm
for non-volatile memory and neuromorphic systems due to low power consumption, smaller …

Multifunctional oxide thin films exhibit a broad palette of properties, such as ferroelectricity,
piezoelectricity, dielectricity, superconductivity, and metal-insulator transition (MIT); …

Single synaptic device with inherent learning and memory functions is demonstrated based
on a forming-free amorphous Y 2 O 3 (yttria) memristor fabricated by dual ion beam …

The phenomenon of positive aging has been frequently reported in quantum dot light-
emitting diodes (QLEDs). However, the root cause for this phenomenon remains illusive. On …