Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been
used as contacts for metal oxide semiconductor (CMOS) transistors and have more become …

We present a multitechnique (scanning tunneling microscopy, photoelectron spectroscopy,
and ion scattering spectroscopy) approach to study the formation of the Fe/Si (111) interface …

There is great interest in one-dimensional (1D) nanostructures that allow lateral relaxation
and can be used to reduce pulverization of a silicon-based anode material. However, the …

For exploring group-IV semiconductor spintronics with ferromagnetic Heusler compounds,
we study the local structural ordering of the stoichiometric Fe 3 Si and off-stoichiometric Fe 3 …

The initial stages of iron silicide growth on the Si (100) 2× 1 surface during solid-phase
synthesis were investigated by photoelectron spectroscopy using synchrotron radiation. The …

Carrier transport across Fe 3 O 4∕ Si interfaces has been studied for two different Si
substrate orientations. The Fe 3 O 4 films exhibit a (111) texture on both (111)-and (001) …

High-resolution photoelectron spectroscopy with synchrotron radiation and magnetic linear
dichroism in Fe 3 p core-level photoemission has been used to study both the initial stages …

We compare electrical spin injection from Fe into Si nip heterostructures using different
tunnel barriers—a reversed biased Fe/Si Schottky contact and a Fe/Al 2 O 3 barrier. The …

In this work we analyze the role of the SiO 2 layer in the functionality of Fe 3 O 4/SiO 2/Si
heterostructures, which have been proved to present a strong potential for spin-based …

Porous silicon (PS) is characterized by a very large surface that is very reactive with the
external environment. In this work, the chemical composition of the internal surface of both …