Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Atomic layer deposition (ALD) is a vapor-phase deposition technique that has attracted
increasing attention from both experimentalists and theoreticians in the last few decades …

Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap
semiconductors that can provide devices having high breakdown voltages and are capable …

Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …

Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …

Charge-trap** defects in Pt/Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor
capacitors and their passivation by hydrogen are investigated in samples with abrupt …

Interface characterization was carried out on Al 2 O 3/GaN structures using epitaxial n-GaN
layers grown on free-standing GaN substrates with relatively low dislocation density (< 3× 10 …

The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …

We report on the electrical characteristics of HfO 2 and HfO 2/Al 2 O 3 gate dielectrics
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …

The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …