Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …

HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …

Ferroelectricity, ie, the characteristic of polar crystals whose spontaneous polarization can
be reversed by the application of an appropriate electric field, originates from the formation …

Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and
transistors due to its superior scalability and seamless integration with complementary metal …

Hf 0.5 Zr 0.5 O 2 (HZO) thin films are promising for applications in ferroelectric memories.
However, these materials often face challenges, such as polarization fluctuations (eg …

Ferroelectric hafnium-zirconium oxide (HZO) is an excellent candidate for low-power non-
volatile memory applications due to its demonstrated ferroelectricity at the nanoscale and …

This study proposes a novel approach to achieving highly reliable, low-voltage polarization
switching of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin films using polymorph-and orientation …

{100}-Oriented epitaxial orthorhombic (Hf0. 93Y0. 07) O2 (7YHO) films were grown at 700°
C on various substrates, with and without (Ce0. 35Zr0. 65) O2 (CZO) buffer layers, by using …

(Hf, Zr)-based ferroelectric thin films have recently received significant interest as next-
generation memory device materials. However, the high crystallization temperature of over …