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Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Radiation damage in wide and ultra-wide bandgap semiconductors
SJ Pearton, A Aitkaliyeva, M ** in pulsed-laser-deposited - for device applications
S Vogt, C Petersen, H von Wenckstern… - Physical Review …, 2024 - APS
The feasibility of zirconium do** of α-Ga 2 O 3 grown by pulsed laser deposition is
demonstrated. Targets with different zirconium contents are used to adjust the zirconium …
demonstrated. Targets with different zirconium contents are used to adjust the zirconium …
Realization of Conductive n‐Type Doped α‐Ga2O3 on m‐Plane Sapphire Grown by a Two‐Step Pulsed Laser Deposition Process
S Vogt, C Petersen, M Kneiß, D Splith… - … status solidi (a), 2023 - Wiley Online Library
Structural and electrical properties of undoped and doped α‐Ga2O3 thin films grown by
pulsed laser deposition on m‐plane sapphire in a two‐step process are presented. A buffer …
pulsed laser deposition on m‐plane sapphire in a two‐step process are presented. A buffer …
Lateral α-Ga2O3: Zr metal–semiconductor field effect transistors
S Vogt, D Splith, S Köpp, P Schlupp, C Petersen… - Applied Physics …, 2024 - pubs.aip.org
We present α-Ga 2 O 3: Zr based metal–semiconductor field-effect transistors (MESFETs)
with PtO x/Pt gate contacts. Pulsed laser deposition is used to grow the α-Ga 2 O 3: Zr thin …
with PtO x/Pt gate contacts. Pulsed laser deposition is used to grow the α-Ga 2 O 3: Zr thin …
Progression of group-III sesquioxides: epitaxy, solubility and desorption
A Hassa, M Grundmann… - Journal of Physics D …, 2021 - iopscience.iop.org
In recent years, ultra-wide bandgap semiconductors have increasingly moved into scientific
focus due to their outstanding material properties, making them promising candidates for …
focus due to their outstanding material properties, making them promising candidates for …
Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
There is increasing interest in α-polytype Ga 2 O 3 for power device applications, but there
are few published reports on dielectrics for this material. Finding a dielectric with large band …
are few published reports on dielectrics for this material. Finding a dielectric with large band …
Strain states and relaxation for -(AlGa)O thin films on prismatic planes of -AlO in the full composition range: Fundamental difference of a- and m …
Pseudomorphic and relaxed α α-(Al _x x Ga _ 1-x 1-x) _2 2 O _3 3 thin films are grown by
combinatorial pulsed laser deposition in the entire composition range on prismatic a-and m …
combinatorial pulsed laser deposition in the entire composition range on prismatic a-and m …