Abstract 2D β‐Ga2O3 nanosheets, as fundamental materials, have great potential in next
generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind …

β-Ga 2 O 3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at
670 C and 630 C onto a γ-Al 2 O 3 (111) buffer layer grown at 840 C by e-beam evaporation …

We report on the nondestructive measurement of Young's modulus of thin-film single crystal
beta gallium oxide (β-Ga 2 O 3) out of its nanoscale mechanical structures by measuring …

Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 eV–4.9 eV)
semiconductor with attractive properties for future power electronics, optoelectronics, and …

Highly crystalline β-Ga 2 O 3 has been grown on a c-plane (0001) sapphire substrate using
low-pressure chemical vapor deposition. This work has been focused on the impacts of the …

Thin Ga 2 O 3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO 3
(001) and SrTiO 3-buffered Si (001) substrates. Examination using reflection-high-energy …

The present article demonstrates a uniquely synthesized quasi-two-dimensional (2D) β-Ga 2
O 3 nanoflakes (NFs)-based deep UV photodetectors (UPDs). The thinnest Ga 2 O 3 NFs …

Abstract β-Ga2O3 nanocrystals have been successfully obtained by the high-energy ball
milling method. The obtained nanocrystalline powders have been characterized using X-ray …

built by employing a vibrating β-Ga 2 O 3 nanoresonator as the frequency reference for real-
time middle ultraviolet (MUV) light detection. We fabricate suspended β-Ga 2 O 3 …

In this study, single crystalline β-Ga 2 O 3 microstructures (wires, belts, and sheets) were
simultaneously synthesized by catalyst-free thermal oxidation. Monoclinic phase of …