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Selective area do** of GaN toward high-power applications
Selective area do** in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Analysis of vertical GaN JBS and pn diodes by Mg ion implantation and ultrahigh-pressure annealing
We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
[HTML][HTML] Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride
In the present study, the diffusion of magnesium in gallium nitride was investigated. In order
to ensure high structural quality and purity of the analyzed material, bulk crystals, grown by …
to ensure high structural quality and purity of the analyzed material, bulk crystals, grown by …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
S Luo, K Fu, Q **/Detrap** of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
Annealing behaviors of vacancy‐type defects in ion‐implanted GaN are studied by positron
annihilation. Mg+ and N+ ions are implanted to obtain 700 nm deep box profiles with Mg …
annihilation. Mg+ and N+ ions are implanted to obtain 700 nm deep box profiles with Mg …
On band-to-band tunneling and field management in NiOx/β-Ga2O3 PN junction and PiN diodes
Due to the non-availability of p-type β-Ga 2 O 3 films, p-type NiO x is gaining attention as a
promising alternative to complement the n-type β-Ga 2 O 3 films. This work investigated the …
promising alternative to complement the n-type β-Ga 2 O 3 films. This work investigated the …
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal
diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN …
diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN …
Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
In this work, we present a concept that leverages the strong piezoelectric polarization field in
InGaN, which counteracts the external electric field at reverse bias. We show that despite the …
InGaN, which counteracts the external electric field at reverse bias. We show that despite the …
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that
have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating …
have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating …
Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode
Fluorine implantation has been reported to be effective in suppressing electric fields at the
edge of Schottky contacts in GaN due to the formation of fixed negative charged traps. In this …
edge of Schottky contacts in GaN due to the formation of fixed negative charged traps. In this …