The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen
vacancies significantly affect their properties. In this work, we provide a reproducible and …

Graphene-based materials exhibit remarkable electronic, optical, and mechanical
properties, which has resulted in both high scientific interest and huge potential for a variety …

We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Anode‐free lithium‐metal batteries employ in situ lithium‐plated current collectors as
negative electrodes to afford optimal mass and volumetric energy densities. The main …

The isolation of graphene in 2004 from graphite was a defining moment for the “birth” of a
field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing …

Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered
materials, have provided researchers a fertile ground for harvesting fundamental science …

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and
understanding of their electronic and optical functionality represent major challenges …

Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2,
WS2 and WSe2, constitute an important class of materials with a layered crystal structure …