In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …

The ordering of quantum dots in three-dimensional quantum dot lattices is investigated by
grazing-incidence small-angle X-ray scattering (GISAXS). Theoretical models describing …

Abstract Amorphous Ge/SiO 2 multilayer structures deposited by magnetron sputtering have
been annealed at different temperatures between 650 and 800° C for obtaining Ge …

We investigated the production conditions and optoelectrical properties of thin film material
consisting of regularly ordered core/shell Ge/Al and Ge/Si3N4/Al quantum dots (QDs) in an …

A method to enhance the optoelectronic properties of thin films containing three-dimensional
ordered germanium quantum dots (QDs) coated with metal shell (Al, Ta, and Ti) in alumina …

In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-
nm-thick Ge+ Al 2 O 3 layer during magnetron sputtering deposition of a Ge+ Al 2 O 3 …

In this article, we show how to produce materials consisting of regularly ordered Ge quantum
dot lattices in an amorphous alumina matrix with a controllable Ge quantum dot size, shape …

Self-assembled growth of Ge quantum dot lattices in oxide matrices prepared by the quite
simple magnetron sputtering deposition method allows the preparation of a variety of …

The motivation of this work is the tailored growth of Ge nanocrystals for photovoltaic
applications. The use of superlattices provides a reliable method to control the Ge …

We demonstrate the production of a well ordered three-dimensional array of Ge quantum
dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and …