Artificial synapse with good linearity is a critical issue in conductive bridging random access
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …

The Cu migration is controlled by using an optimized AlO x interfacial layer, and effects on
resistive switching performance, artificial synapse, and human saliva detection in an …

Abstract Bilayer of NiO x/TiO 2 thin film spin-coated and sputtering-deposited on the fluorine
doped tin oxide (FTO) substrate is employed to develop a resistive random access memory …

The application of a NiO y/NiO x bilayer in resistive switching (RS) devices with x> y was
studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change …

A resistive switching device with inherent nonlinear characteristics through a delicately
engineered interfacial layer is an ideal component to be integrated into passive crossbar …

Post-metal annealing temperature-dependent forming-free resistive switching memory
characteristics, Fowler-Nordheim (FN) tunneling at low resistance state, and after reset using …

We reported an Al 2 O 3/HfO 2/Al 2 O 3 sandwich structure resistive switching device with
significant improvement of multilevel cell (MLC) operation capability, which exhibited that …

Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer
thickness ranging from 2 to 20 nm in a Cu/Ir/TiNxOy/TiN resistive switching memory device is …

The MoS 2 as a switching material has recently shown promising resistive switching
characteristics. In this work, we demonstrate the impact of TiO x/Al 2 O 3 interfacial layer on …

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are
responsible for the resistive switching of the HfO 2-based resistive random access memory …