We have performed an extensive study of the effects of border traps (near-interfacial oxide
traps that can communicate with the underlying Si over a wide range of time scales) on the …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

This paper presents a review for the non-specialist of MOS device degradation due to total
dose ionizing radiation in the natural space environment. Interface and oxide charge …

Total ionizing dose radiation effects on the electrical properties of metal-oxide-
semiconductor devices and integrated circuits are complex in nature and have changed …

This paper presents a physics-based compact modeling approach that incorporates the
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …

The effect of net positive oxide trapped charge and surface recombination velocity on excess
base current in BJTs (bipolar junction transistors) is identified. Although the interaction of …

Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …

It was found that the 1/f noise and channel resistance of unirradiated nMOS transistors from
a single lot with various gate-oxide splits closely correlate with the oxide-trap and interface …

Radiation effects testing, part selection, and hardness assurance for application to electronic
components in the natural space environment are discussed. The emphasis is on …