Performance assessment of the charge-plasma-based cylindrical GAA vertical nanowire TFET with impact of interface trap charges
In this article, a charge-plasma (CP)-based gate-all-around (GAA) silicon vertical nanowire
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
tunnel field-effect transistor (NWTFET) is proposed. The effects of interface trap charges …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
GaAs0. 5Sb0. 5/In0. 53Ga0. 47As heterojunction do**less charge plasma-based tunnel FET for analog/digital performance improvement
A dual side do**-less (DL) GaAs 0.5 Sb 0· 5/In 0. 53 Ga 0. 47 As heterojunction tunnel
FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO 2/SiO 2) …
FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO 2/SiO 2) …
Design of tunnel FET architectures for low power application using improved Chimp optimizer algorithm
An improved Chimps optimizer algorithm is proposed in this paper and is applied for the
performance optimization of tunnel FET architectures for use in low power VLSI circuits. The …
performance optimization of tunnel FET architectures for use in low power VLSI circuits. The …
Investigation of interface trap charges and temperature variation in heterostacked-TFET
This paper analyzes the reliability issues of the Heterostacked-TFET (HS-TFET) in detail.
The investigation of the device reliability is carried out by examining the effect of interface …
The investigation of the device reliability is carried out by examining the effect of interface …
Modeling and simulation of optically gated TFET for near infra-red sensing applications and its low frequency noise analysis
In this paper, optically gated Tunnel Field Effect Transistor (TFET), operating on the principle
of band-to-band tunneling, is designed for sensing closely spaced spectral wavelengths …
of band-to-band tunneling, is designed for sensing closely spaced spectral wavelengths …
Design Transmission Gates Using Double-Gate Junctionless TFETs
Transmission gate has been implemented using tunnel field-effect-transistor (TFET) in the
presented work. This work demonstrates the benefits of replacing MOS devices with TFET …
presented work. This work demonstrates the benefits of replacing MOS devices with TFET …
Research on total ionizing dose effect and reinforcement of SOI-TFET
C Chong, H Liu, S Wang, X Wu - micromachines, 2021 - mdpi.com
Since the oxide/source overlap structure can improve the tunneling probability and on-state
current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) …
current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) …
Design and investigation of a dual material gate arsenic alloy heterostructure junctionless TFET with a lightly doped Source
H **e, H Liu, S Chen, T Han, S Wang - Applied Sciences, 2019 - mdpi.com
This paper designs and investigates a novel structure of dual material gate-engineered
heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly …
heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly …
Interfacial charge and temperature analysis of gate-all-around line tunneling TFET for improved device reliability
In this article, the impact of interface-trap charges (ITCs) on the DC and analog/RF
parameters of gate-all-around vertical TFET (GAA-VTFET) are considered to evaluate the …
parameters of gate-all-around vertical TFET (GAA-VTFET) are considered to evaluate the …