Vapor phase growth of semiconductor nanowires: key developments and open questions
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Semiconductor nanowires: to grow or not to grow?
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
[HTML][HTML] High-strength, multifunctional and 3D printable mullite-based porous ceramics with a controllable shell-pore structure
F Yang, S Zhao, G Chen, K Li, Z Fei, P Mummery… - Advanced Powder …, 2024 - Elsevier
The quest for lightweight and functional materials poses stringent requirements on
mechanical performance of porous materials. However, the contradiction between high …
mechanical performance of porous materials. However, the contradiction between high …
Solution–liquid–solid synthesis, properties, and applications of one-dimensional colloidal semiconductor nanorods and nanowires
The solution–liquid–solid (SLS) and related solution-based methods for the synthesis of
semiconductor nanowires and nanorods are reviewed. Since its discovery in 1995, the SLS …
semiconductor nanowires and nanorods are reviewed. Since its discovery in 1995, the SLS …
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Bistability of contact angle and its role in achieving quantum-thin self-assisted GaAs nanowires
Achieving quantum confinement by bottom-up growth of nanowires has so far been limited
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …
Second-harmonic generation imaging of semiconductor nanowires with focused vector beams
We use second-harmonic generation (SHG) with focused vector beams to investigate
individual vertically aligned GaAs nanowires. Our results provide direct evidence that SHG …
individual vertically aligned GaAs nanowires. Our results provide direct evidence that SHG …
Understanding the composition of ternary III-V nanowires and axial nanowire heterostructures in nucleation-limited regime
VG Dubrovskii, AA Koryakin, NV Sibirev - Materials & Design, 2017 - Elsevier
We present a new analytical approach for understanding and tuning the composition of
ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial …
ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial …
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …
devices with tunable bandgap. However, the lack of insight into the effects of the …