Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy–A review
The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two‐
dimensional systems made of zinc‐blende III–V, wurtzite, and SiGe semiconductors. We …
dimensional systems made of zinc‐blende III–V, wurtzite, and SiGe semiconductors. We …
[HTML][HTML] A review of high magnetic moment thin films for microscale and nanotechnology applications
G Scheunert, O Heinonen, R Hardeman… - Applied Physics …, 2016 - pubs.aip.org
The creation of large magnetic fields is a necessary component in many technologies,
ranging from magnetic resonance imaging, electric motors and generators, and magnetic …
ranging from magnetic resonance imaging, electric motors and generators, and magnetic …
Interstitial-nitrogen-and oxygen-induced magnetism in Gd-doped GaN
The observed ferromagnetism in Gd-doped GaN appears to arise from lattice defects
incorporated along with Gd rather than from Gd itself. A previous model, invoking Ga …
incorporated along with Gd rather than from Gd itself. A previous model, invoking Ga …
Variable range hop** transport in ferromagnetic GaGdN epitaxial layers
Electrical-transport properties of ferromagnetic GaGdN layers grown by molecular-beam
epitaxy on highly resistive 6H-SiC (0001) substrates have been investigated. It is found that …
epitaxy on highly resistive 6H-SiC (0001) substrates have been investigated. It is found that …
Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation
In this work, effects of interstitial oxygen on the ferromagnetism in Gd-doped GaN system
were investigated via first principles, including both total energy and band structure …
were investigated via first principles, including both total energy and band structure …
Defect-enhanced ferromagnetism in Gd-and Si-coimplanted GaN
GaN grown by metal-organic chemical vapor deposition was coimplanted with Gd+ ions with
energy of 155 keV and dose of 2.75× 10 10 cm− 2 and Si 4+ ions with energies of 5 and 40 …
energy of 155 keV and dose of 2.75× 10 10 cm− 2 and Si 4+ ions with energies of 5 and 40 …
Superparamagnetism in Gd-doped GaN induced by Ga-vacancy clustering
A Thiess, PH Dederichs, R Zeller, S Blügel… - Physical Review B …, 2012 - APS
On the basis of the energetics and magnetic exchange interactions obtained from large-
scale first-principles electronic structure calculations, a gallium-vacancy clustering model is …
scale first-principles electronic structure calculations, a gallium-vacancy clustering model is …
Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd
A Ney, T Kammermeier, V Ney, S Ye, K Ollefs… - Physical Review B …, 2008 - APS
Element specific x-ray magnetic dichroism measurements have been carried out at the Ga K
and Ga and Gd L 3 edges of the dilute magnetic semiconductor (DMS) Gd: GaN grown by …
and Ga and Gd L 3 edges of the dilute magnetic semiconductor (DMS) Gd: GaN grown by …
Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies
A Thiess, S Blügel, PH Dederichs, R Zeller… - Physical Review B, 2015 - APS
Using large supercells models and the KKRnano multiple scattering approach, statistically
meaningful information is obtained on the distribution of local densities of states, magnetic …
meaningful information is obtained on the distribution of local densities of states, magnetic …
Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy
In this study, Gd ion implantation and annealing were performed at 900∘ C for nominally
undoped wurtzite GaN grown by metal-organic chemical vapor deposition. Spin-polarized …
undoped wurtzite GaN grown by metal-organic chemical vapor deposition. Spin-polarized …