Novel cold cathode materials and applications
NS Xu, SE Huq - Materials Science and Engineering: R: Reports, 2005 - Elsevier
Field emission (FE) is based on the physical phenomenon of quantum tunneling, in which
electrons are injected from the surface of materials into vacuum under the influence of an …
electrons are injected from the surface of materials into vacuum under the influence of an …
[書籍][B] Nanotechnology: an introduction to nanostructuring techniques
M Köhler, W Fritzsche - 2008 - books.google.com
Expectations of a technological revolution are associated with nanotechnology, and indeed
the generation, modification and utilization of objects with tiniest dimensions already …
the generation, modification and utilization of objects with tiniest dimensions already …
[書籍][B] GaAs high-speed devices: physics, technology, and circuit applications
CY Chang, F Kai - 1994 - books.google.com
The performance of high-speed semiconductor devices—the genius driving digital
computers, advanced electronic systems for digital signal processing, telecommunication …
computers, advanced electronic systems for digital signal processing, telecommunication …
Self-assembly of lithographically patterned nanoparticles
JH Cho, DH Gracias - Nano letters, 2009 - ACS Publications
The construction of three-dimensional (3D) objects, with any desired surface patterns, is
both critical to and easily achieved in macroscale science and engineering. However, on the …
both critical to and easily achieved in macroscale science and engineering. However, on the …
10‐nm linewidth electron beam lithography on GaAs
Metal features with 1O-nm linewidths were produced on thick GaAs substrates using
electron beam lithography. A single layer of poly methyl methacrylate (PMMA) was exposed …
electron beam lithography. A single layer of poly methyl methacrylate (PMMA) was exposed …
Fabrication of 3 nm wires using 100 keV electron beam lithography and poly (methyl methacrylate) resist
We report the fabrication of 3 nm NiCr wires on a solid silicon substrate. The process uses
conventional 100 keV electron beam lithography and poly (methyl methacrylate) resist. The …
conventional 100 keV electron beam lithography and poly (methyl methacrylate) resist. The …
New high‐contrast developers for poly (methyl methacrylate) resist
GH Bernstein, DA Hill, WP Liu - Journal of applied physics, 1992 - pubs.aip.org
New developers for poly (methyl methacrylate) consisting of mixtures of common develo**
components have been carefully investigated. It has been found that adding a small …
components have been carefully investigated. It has been found that adding a small …
[書籍][B] Semiconductor spintronics
T Schäpers - 2021 - books.google.com
This revised and expanded edition of the first comprehensive introduction to the rapidly-
evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin …
evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin …
Polymers in electron beam and x-ray lithography
W Schnabel, H Sotobayashi - Progress in Polymer Science, 1983 - Elsevier
Polymers in electron beam and X-Ray lithography - ScienceDirect Skip to main contentSkip to
article Elsevier logo Journals & Books Search RegisterSign in View PDF Download full issue …
article Elsevier logo Journals & Books Search RegisterSign in View PDF Download full issue …
Measurement of the profile of finely focused electron beams in a scanning electron microscope
SA Rishton, SP Beaumont… - Journal of Physics E …, 1984 - iopscience.iop.org
Electron beam spot diameters can be estimated either by resolution tests or by scanning the
beam over a sharp edge and detecting the transmitted (or reflected) current. The sharp edge …
beam over a sharp edge and detecting the transmitted (or reflected) current. The sharp edge …