The future transistors
The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …
Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges
As a possible pathway to continue Moore's law indefinitely into the future as well as
unprecedented beyond-Moore heterogeneous integration, we examine the prospects of …
unprecedented beyond-Moore heterogeneous integration, we examine the prospects of …
Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors
The semiconductor industry is transitioning to the 'More Moore'era, driven by the adoption of
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
three-dimensional (3D) integration schemes surpassing the limitations of traditional two …
3-D sequential integration: A key enabling technology for heterogeneous co-integration of new function with CMOS
P Batude, T Ernst, J Arcamone, G Arndt… - IEEE Journal on …, 2012 - ieeexplore.ieee.org
3-D sequential integration stands out from other 3-D schemes as it enables the full use of the
third dimension. Indeed, in this approach, 3-D contact density matches with the transistor …
third dimension. Indeed, in this approach, 3-D contact density matches with the transistor …
Method of constructing a semiconductor device and structure
Z Or-Bach, DC Sekar, B Cronquist, I Beinglass… - US Patent …, 2012 - Google Patents
2011-12-06 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …
Monolithic 3D-ICs with single grain Si thin film transistors
R Ishihara, J Derakhshandeh, MRT Mofrad, T Chen… - Solid-State …, 2012 - Elsevier
Monolithic 3D integration is the ultimate approach in 3D-ICs as it provides high-density and
submicron vertical interconnects and hence transistor level integration. Here, high-quality Si …
submicron vertical interconnects and hence transistor level integration. Here, high-quality Si …
CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits
3-D monolithic integration (3DMI), also termed as sequential integration, is a potential
technology for future gigascale circuits. Since the device layers are processed in sequential …
technology for future gigascale circuits. Since the device layers are processed in sequential …
Performance analysis of 3-D monolithic integrated circuits
3-D monolithic integration (3DMI), also termed as sequential integration, is a potential
technology for future gigascale circuits. Since the device layers are processed in sequential …
technology for future gigascale circuits. Since the device layers are processed in sequential …
Multilevel semiconductor device and structure with memory
Z Or-Bach, JW Han - US Patent 10,515,981, 2019 - Google Patents
US10515981B2 - Multilevel semiconductor device and structure with memory - Google
Patents US10515981B2 - Multilevel semiconductor device and structure with memory …
Patents US10515981B2 - Multilevel semiconductor device and structure with memory …
Method of forming three dimensional integrated circuit devices using layer transfer technique
Z Or-Bach, D Sekar, B Cronquist, Z Wurman - US Patent 8,642,416, 2014 - Google Patents
US8642416B2 - Method of forming three dimensional integrated circuit devices using layer
transfer technique - Google Patents US8642416B2 - Method of forming three dimensional …
transfer technique - Google Patents US8642416B2 - Method of forming three dimensional …