Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
[BUKU][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Odyssey of the charge pum** technique and its applications from micrometric-to atomic-scale era
B Djezzar - Journal of Applied Physics, 2023 - pubs.aip.org
This paper reviews the evolution of the charge pum** (CP) technique and its applications
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
from the micrometer-scale to the atomic-scale device era. We describe the more significant …
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
Random telegraph noise (RTN) measurements are typically carried out at the device level
using standard probe station based electrical characterization setup, where the measured …
using standard probe station based electrical characterization setup, where the measured …
Analysis of charge-pum** data for identification of dielectric defects
D Veksler, G Bersuker, A Koudymov… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
We introduce a data analysis methodology for multifrequency charge-pum** (CP)
measurements, which allows extracting both spatial and energy profiles of the CP-active …
measurements, which allows extracting both spatial and energy profiles of the CP-active …
CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state
In this study, we perform random telegraph noise (RTN) spectroscopy on ultra-thin HfÜ2
dielectric films using a conductive atomic force microscope (CAFM), enabling accurate …
dielectric films using a conductive atomic force microscope (CAFM), enabling accurate …
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
In this manuscript, we have investigated the negative bias temperature instability (NBTI)
induced border-trap (N bt) depth in the interfacial oxide region of PMOS transistors using …
induced border-trap (N bt) depth in the interfacial oxide region of PMOS transistors using …
Frequency dependent charge pum**—A defect depth profiling tool?
We investigate the validity of using frequency-dependent charge pum** (FD-CP) to
determine bulk defect depth distributions. Using simple physical arguments we conclude …
determine bulk defect depth distributions. Using simple physical arguments we conclude …
Multi-technique study of defect generation in high-k gate stacks
A set of measurement techniques-SILC, low frequency noise, and pulse CV-combined with
the physical descriptions of the processes associated with these measurements were …
the physical descriptions of the processes associated with these measurements were …
Optimisation multi-objectif par algorithmes génétiques et approche pareto des paramètres d'usinage sous contraintes des limitations de production
B Merdjaoui - 2006 - ccdz.cerist.dz
Résumé L'optimisation des conditions de coupe en fabrication sérielle de produits
industriels par enlèvement de matière est une étape indispensable dans le cadre de …
industriels par enlèvement de matière est une étape indispensable dans le cadre de …
On the contribution of bulk defects on charge pum** current
Frequency-dependent charge pum** (CP)(FD-CP) has emerged as a popular technique
for studying the spatial and energetic distribution of defect centers in advanced high-k gate …
for studying the spatial and energetic distribution of defect centers in advanced high-k gate …