Recent progress in semiconductor excitable lasers for photonic spike processing

PR Prucnal, BJ Shastri, T Ferreira de Lima… - Advances in Optics …, 2016 - opg.optica.org
Recently, there has been tremendous interest in excitable optoelectronic devices and in
particular excitable semiconductor lasers that could potentially enable unconventional …

[LIBRO][B] Neuromorphic photonics

PR Prucnal, BJ Shastri - 2017 - taylorfrancis.com
This book sets out to build bridges between the domains of photonic device physics and
neural networks, providing a comprehensive overview of the emerging field of" …

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

AW Fang, H Park, O Cohen, R Jones, MJ Paniccia… - Optics express, 2006 - opg.optica.org
An electrically pumped light source on silicon is a key element needed for photonic
integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon …

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon

P Chen, WV Chen, PKL Yu, CW Tang, KM Lau… - Applied Physics …, 2009 - pubs.aip.org
Functioning InP/InGaAs/InP pin photodiodes were integrated onto a Si substrate using
hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching …

Heterogeneous silicon/III–V semiconductor optical amplifiers

ML Davenport, S Skendžić, N Volet… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We report high output power and high-gain semiconductor optical amplifiers integrated on a
heterogeneous silicon/III-V photonics platform. The devices produce 25 dB of unsaturated …

Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector

AW Fang, R Jones, H Park, O Cohen, O Raday… - Optics express, 2007 - opg.optica.org
Here we report a racetrack resonator laser integrated with two photo-detectors on the hybrid
AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid …

InP-based photonic circuits: Comparison of monolithic integration techniques

J Van Der Tol, YS Oei, U Khalique, R Nötzel… - Progress in Quantum …, 2010 - Elsevier
A review is given of techniques to integrate passive and active, optical and optoelectronic,
functions within one photonic circuit. Different platforms have been developed to realize …

Electrically pumped hybrid evanescent Si/InGaAsP lasers

X Sun, A Zadok, MJ Shearn, KA Diest, A Ghaffari… - Optics letters, 2009 - opg.optica.org
Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-
V gain material for the first time to our knowledge. The lasing threshold current of 300-μm …

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

Y Tang, HW Chen, S Jain, JD Peters, U Westergren… - Optics express, 2011 - opg.optica.org
We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid
silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical …

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp

HW Chen, JD Peters, JE Bowers - Optics express, 2011 - opg.optica.org
Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp clickable element to expand
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