Emerging Versatile Two‐Dimensional MoSi2N4 Family
The discovery of 2D layered MoSi2N4 and WSi2N4 without knowing their 3D parents by
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …
Physical properties of monolayer and its applications in sub–3 nm spintronic devices
Z Li, J Han, S Cao, Z Zhang, X Deng - Physical Review B, 2023 - APS
Half semiconductors, capable of achieving 100% spin-polarized carriers under simple
electrostatic gating, optical excitation, and thermal excitation conditions, have emerged as …
electrostatic gating, optical excitation, and thermal excitation conditions, have emerged as …
Flexible MA 2 Z 4 (M= Mo, W; A= Si, Ge and Z= N, P, As) monolayers with outstanding mechanical, dynamical, electronic, and piezoelectric properties and anomalous …
X Wang, W Ju, D Wang, X Li, J Wan - Physical Chemistry Chemical …, 2023 - pubs.rsc.org
We systematically investigate the mechanical, dynamical, and piezoelectric properties of
MA2Z4 monolayers (M= Mo, W; A= Si, Ge and Z= N, P, As) based on first-principles …
MA2Z4 monolayers (M= Mo, W; A= Si, Ge and Z= N, P, As) based on first-principles …
Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study
C Luo, T Chen, X Dong, L ** Engineering
As an effective means to change the crystal structure, regulate the physical properties and
expand the application potential of layered two-dimensional (2D) materials, do** strategy …
expand the application potential of layered two-dimensional (2D) materials, do** strategy …
Two-dimensional HfS 2–ZrS 2 lateral heterojunction FETs with high rectification and photocurrent
L Li, P Yuan, Z Ma, M He, Y Jiang, T Wang, C **a, X Li - Nanoscale, 2023 - pubs.rsc.org
Multifunctional devices are an indispensable choice to fulfil the increasing demand for
miniaturized and integrated circuit systems. However, bulk material-based devices …
miniaturized and integrated circuit systems. However, bulk material-based devices …
Two-dimensional Janus MGeSiP 4 (M= Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations
Novel Janus materials have attracted broad interest due to the outstanding properties
created by their out-of-plane asymmetry, with increasing theoretical exploration and more …
created by their out-of-plane asymmetry, with increasing theoretical exploration and more …
Structural, optoelectronic and photocatalytic properties of MX (M= Ga, In; X= S, Se, Te) contact with novel janus GaInS3 monolayers
Using DFT calculations, we have fabricated the MX-GaInS 3 (M= Ga, In; X= S, Se, Te) van
dar Waals Heterostructures (vdWHs) and systematically calculated the structural, electronic …
dar Waals Heterostructures (vdWHs) and systematically calculated the structural, electronic …
Combination of silicene and boronene as a potential anode material for high-performance lithium-ion batteries: Insights from first principles
H Ren, Y Su, S Zhao, C Li, X Wang, B Li, B Zhang - Heliyon, 2024 - cell.com
Material design is essential for the development and preparation of new materials. In this
paper, a new two-dimensional heterostructure material (B@ Si) consisting of boronene and …
paper, a new two-dimensional heterostructure material (B@ Si) consisting of boronene and …