Investigation of InAlN layers surface reactivity after thermal annealings: a complete XPS study for HEMT
Y Bourlier, M Bouttemy, O Patard… - ECS Journal of Solid …, 2018 - iopscience.iop.org
The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
An insider view of the Portuguese ion beam laboratory
Accelerators are behind many major scientific and technological breakthroughs giving a
gigantic contribution to unveil the mysteries of matter. This quest continues nowadays using …
gigantic contribution to unveil the mysteries of matter. This quest continues nowadays using …
Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga,
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Practical issues for atom probe tomography analysis of III-nitride semiconductor materials
Various practical issues affecting atom probe tomography (APT) analysis of III-nitride
semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN …
semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN …
[HTML][HTML] Structural and optical properties of Ga auto-incorporated InAlN epilayers
InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical
vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by …
vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by …
Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer
P Chauhan, S Hasenöhrl, E Dobročka, Ľ Vančo… - Applied Surface …, 2019 - Elsevier
Abstract Thick (> 150 nm) I nx A l 1-x N layers were grown on GaN/sapphire (0 0 0 1) by
organometallic vapor phase epitaxy. Growth temperature of I nx A l 1-x N layers was …
organometallic vapor phase epitaxy. Growth temperature of I nx A l 1-x N layers was …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - pubs.aip.org
Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
Strongly nonparabolic variation of the band gap in InxAl1− xN with low indium content
120 nm thick In x Al 1− x N epitaxial layers with 0< x< 0.224 were grown by metalorganic
vapour phase epitaxy on AlN/Al 2 O 3-templates. The composition was varied through …
vapour phase epitaxy on AlN/Al 2 O 3-templates. The composition was varied through …
Validity of Vegard's rule for Al1− xInxN (0.08< x< 0.28) thin films grown on GaN templates
S Magalhães, N Franco, IM Watson… - Journal of Physics D …, 2017 - iopscience.iop.org
In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry
(RBS) measurements allow a comprehensive characterization of Al 1− x In x N thin films …
(RBS) measurements allow a comprehensive characterization of Al 1− x In x N thin films …
[HTML][HTML] Multicharacterization approach for studying InAl (Ga) N/Al (Ga) N/GaN heterostructures for high electron mobility transistors
We report on our multi–pronged approach to understand the structural and electrical
properties of an InAl (Ga) N (33nm barrier)/Al (Ga) N (1nm interlayer)/GaN (3μm)/AlN …
properties of an InAl (Ga) N (33nm barrier)/Al (Ga) N (1nm interlayer)/GaN (3μm)/AlN …