Dilute nitride films with a roughly 1 eV band gap can be lattice-matched to gallium arsenide
and germanium, and therefore could become a critical component in next-generation …

III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP,
become metastable if atoms with significantly smaller or larger covalent radius than the …

We present the first continuous-wave (CW) edge-emitting lasers at 1.5/spl mu/m grown on
GaAs by molecular beam epitaxy (MBE). These single quantum well (QW) devices show …

In the past few years, GaInNAsSb has been found to be a potentially superior material to
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …

GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-
junction solar cells due to the bandgap tunability in the 1.0–1.15 eV range and the possibility …

There is an increasing technological need for a wider array of semiconducting materials that
will allow greater control over the physical and electronic structure within multilayer …

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become
excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers and high …

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16
eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this …

In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …

Anisotropic lateral growth during GaAs (0 0 1) epitaxy can have dramatic effects on the
evolution of patterned features and surface morphology. Many new opto-electronic devices …