Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
Recent advances on dielectrics technology for SiC and GaN power devices
Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …
to meet the requirements of the modern power electronics. In fact, they can allow an …
Selective do** in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Challenges for energy efficient wide band gap semiconductor power devices
Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium
nitride (GaN), are very promising materials for the next generation of power electronics, to …
nitride (GaN), are very promising materials for the next generation of power electronics, to …
Ion implantation do** in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
The current status and trends of 1,200-V commercial silicon-carbide MOSFETs: Deep physical analysis of power transistors from a designer's perspective
AO Adan, D Tanaka, L Burgyan… - IEEE Power Electronics …, 2019 - ieeexplore.ieee.org
There is continuous activity to increase the efficiency and reduce the size of power electronic
systems and modules developed for transportation and automotive electrification …
systems and modules developed for transportation and automotive electrification …
Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …
materials have already found application in microelectronics, mainly as gate insulators or …
SiO2/4H-SiC interface do** during post-deposition-annealing of the oxide in N2O or POCl3
In this Letter, we report a quantitative analysis of the n-type do** occurring at SiO 2/4H-
SiC interfaces during post-deposition-annealing (PDA) in N 2 O or POCl 3 of a 45 nm thick …
SiC interfaces during post-deposition-annealing (PDA) in N 2 O or POCl 3 of a 45 nm thick …
Mobility enhancement in heavily doped 4H-SiC (0001),(112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
The effects of a process that minimizes oxidation of SiC on the channel mobility of heavily
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …